Reshchikov, Michael: search on Z-Library

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1

[Semiconductors and Semimetals] Defects in Semiconductors Volume 91 || Point Defects in GaN

Reshchikov, Michael A.

Year:

2015

Language:

english

File:

PDF, 5.30 MB

english, 2015

2

Luminescence properties of defects in GaN

Reshchikov, Michael A., Morkoc, Hadis

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 2.36 MB

english, 2005

3

Photoluminescence and Excitation Spectra of Deep Defects in GaN

Reshchikov, Michael A., Molnar, Richard J., Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

4

Low-temperature surface photovoltage in p-type GaN

McNamara, Joy D., Foussekis, Michael, Baski, Alison A., Reshchikov, Michael A.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 912 KB

english, 2014

5

Mechanisms of Thermal Quenching of DefectâRelated Luminescence in Semiconductors

Reshchikov, Michael A.

Journal:

physica status solidi (a)

Year:

2020

File:

PDF, 848 KB

2020

6

Evaluation of GaN by photoluminescence measurement

Michael A. Reshchikov

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

7

Determination of GaN polarity on periodically oriented surfaces

Ferguson, Josephus D., Reshchikov, Michael A., Baski, Alison A., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

8

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

Reshchikov, Michael A., Nagata, S., Xie, J., Hertog, B., Osinsky, A.

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 424 KB

english, 2007

9

Two-step thermal quenching of photoluminescence in Zn-doped GaN

Reshchikov, Michael A.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

10

Superlinear increase of photoluminescence with excitation intensity in Zn-doped GaN

Reshchikov, Michael A., Olsen, Anita J., Bishop, Marilyn F., McMullen, Tom

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 3.50 MB

english, 2013

11

Dislocation reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Smith, David J., Huang, Daming, Reshchikov, Michael A, Yun, Feng, King, T., MorkoÃ§, Hadis, Litton, Cole W

Journal:

MRS Proceedings

Year:

2002

File:

PDF, 1.01 MB

2002

12

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Carrier-capture characteristics of point defects in GaN and ZnO

Reshchikov, Michael A.

Year:

2014

Language:

english

File:

PDF, 427 KB

english, 2014

13

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Reshchikov, Michael A.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 3.18 MB

english, 2014

14

Photoluminescence in wurtzite GaN containing carbon

Reshchikov, Michael A., Patillo, Random H., Travis, Kathleen C.

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 163 KB

english, 2005

15

Investigation of Buffer Layers for GaN Grown by MBE

Yun, Feng, Reshchikov, Michael A., Visconti, Paolo, Jones, Keith M., Wang, Dongfeng, Redmond, Marc, Cui, Jie, Litton, Cole W., Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 47 KB

english, 2000

16

Dramatic thermal quenching of photoluminescence in Zn-doped GaN

Reshchikov, Michael A.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 300 KB

english, 2013

17

Acceptors in ZnO Studied by Photoluminescence

Reshchikov, Michael A, Garbus, James, Lopez, Gabriel, Ruchala, Monica, Nemeth, Bill, Nause, Jeff

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

18

Manipulation of Surface Charge on GaN

Ferguson, Josephus D., Foussekis, Michael A., Ruchala, Monika D., Moore, J. C., Reshchikov, Michael A., Baski, Alison A.

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 278 KB

english, 2009

19

Growth and Investigation of GaN/AlN Quantum Dots

Morkoç, Hadis, Reshchikov, Michael A., Jones, Keith M., Yun, Feng, Visconti, Paolo, Nathan, Marshall I., Molnar, Richard J.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 328 KB

english, 2000

20

Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

Cho, Sang-Jun, Doğan, Seydi, Sabuktagin, Shahriar, Reshchikov, Michael A., Johnstone, Daniel K., Morkoç, Hadis

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 296 KB

english, 2004

21

Effect of Growth Conditions on Structural and Electrical Properties of Ga-doped ZnO Films Grown by Plasma-assisted MBE

Avrutin, Vitaliy, Liu, H.Y., Izyumskaya, Natalia, Reshchikov, Michael A., Özgür, Ümit, Kvit, A.V., Voyles, Paul, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 1.49 MB

english, 2009

22

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Temperature dependence of photoconductivity in Zn-doped GaN

Reshchikov, Michael A.

Year:

2014

Language:

english

File:

PDF, 523 KB

english, 2014

23

Photoluminescence Study of Defects in GaN Grown by Molecular Beam Epitaxy

Reshchikov, Michael A., Zhang, Manhong H., Cui, Jie, Visconti, Paolo, Yun, Feng, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 99 KB

english, 2000

24

GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces

Gu, Xing, Reshchikov, Michael A., Teke, Ali, Johnstone, Daniel, MorkocÌ§, Hadis, Nemeth, Bill, Nause, Jeff

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 461 KB

english, 2004

25

Determination of zinc concentration in GaN:Zn,Si from photoluminescence

Mohajerani, Matin Sadat, Reshchikov, Michael A., Behrends, Arne, Bakin, Andrey, Kück, Stefan, Waag, Andreas

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 201 KB

english, 2013

26

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

Reshchikov, Michael A., Kvasov, Alexander A., Bishop, Marilyn F., McMullen, Tom, Usikov, Alexander, Soukhoveev, Vitali, Dmitriev, Vladimir A.

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 1.39 MB

english, 2011

27

Defects in bulk ZnO studied by steady-state and time-resolved photoluminescence

Reshchikov, Michael A.

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 1.25 MB

english, 2007

28

Bowing Parameter of Al x Ga 1-x N

Yun, Feng, Reshchikov, Michael A., He, Lei, King, Thomas, Iqbal, M. Zafar, Morkoç, Hadis, Novak, Steve W., Wei, Luncun

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 254 KB

english, 2002

29

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Rocco, Emma, Licata, Olivia, Mahaboob, Isra, Hogan, Kasey, Tozier, Sean, Meyers, Vincent, McEwen, Benjamin, Novak, Steven, Mazumder, Baishakhi, Reshchikov, Michael, Douglas Bell, L., Shahedipour-Sandv

Journal:

Scientific Reports

Year:

2020

Language:

english

File:

PDF, 1.73 MB

english, 2020

30

GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS

HUANG, DAMING, RESHCHIKOV, MICHAEL A., MORKOÇ, HADIS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2002

Language:

english

File:

PDF, 4.80 MB

english, 2002

31

Fine structure of another blue luminescence band in undoped GaN

Reshchikov, Michael A.

Journal:

Applied Physics Letters

Year:

2019

File:

PDF, 1.75 MB

2019

32

Giant shifts of photoluminescence bands in GaN

Reshchikov, Michael A.

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 3.43 MB

english, 2020

33

Visible Luminescence Related to Defects in ZnO

Reshchikov, Michael A., Nemeth, B., Nause, J., Xie, J., Hertog, B., Osinsky, A., Avrutin, V., Izyumskaya, N., Shimada, R., Morkoc, H.

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 575 KB

english, 2007

34

High quantum efficiency of photoluminescence in GaN and ZnO

Reshchikov, Michael A., Gu, Xing, Nemeth, Bill, Nause, Jeff, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 158 KB

english, 2005

35

Effects of polarity and surface treatment on Ga- and N-polar bulk GaN

Foussekis, Michael, Ferguson, Josephus D., McNamara, Joy D., Baski, Alison A., Reshchikov, Michael A.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 3.10 MB

english, 2012

36

Fine structure of another blue luminescence band in undoped GaN

Reshchikov, Michael A.

Journal:

Applied Physics Letters

Year:

2019

Language:

english

File:

PDF, 1.75 MB

english, 2019

37

Epitaxy of highly optical efficient GaN on O and Zn face ZnO

Gu, Xing, Reshchikov, Michael A., He, Lei, Teke, Ali, Yun, Feng, Johnstone, Daniel K., Nemeth, Bill, Nause, Jeff, Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 613 KB

english, 2003

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